SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

Disclosed is a semiconductor device (130) provided with a substrate to be joined (100), a thin-film element (80) formed on the substrate to be joined (100), and a semiconductor element (90a) which is joined onto the substrate to be joined (100) and in which a plurality of foundation layers (51-54) each comprising an insulation layer and a circuit pattern formed on the insulation layer are stacked on the substrate to be joined (100) side of a semiconductor element body (50). In the foundation layer (54) closest to the substrate to be joined (100), the circuit pattern has an extension portion (E) drawn out to the thin-film element (80) side. A resin layer (120) is provided between the thin-film element (80) and the semiconductor element (90a). The thin-film element (80) and the semiconductor element body (50) are connected to each other via a connection line (121a) provided on the resin layer (120), the extension portion (E), and the circuit patterns.