发明名称 OXIDE VAPOR DEPOSITION MATERIAL AND VAPOR DEPOSITED THIN FILM, AND SOLAR BATTERY
摘要 <P>PROBLEM TO BE SOLVED: To provide an oxide tablet for vapor deposition (oxide vapor deposition material) containing indium oxide as a main component, containing cerium and having a same composition from the surface to the inside, and to provide a vapor deposited thin film produced using the oxide vapor deposition material, and a solar battery in which the thin film is used for an electrode. <P>SOLUTION: The oxide tablet for vapor deposition is composed of a sintered compact containing indium oxide as a main component, containing cerium and not subjected to surface grinding after sintered, and the oxide tablet for vapor deposition satisfies that Comp<SP>S</SP>/Comp<SP>A</SP>=0.9 to 1.1 when the cerium content in the surface layer from the surface of the sintered compact to a depth of 5 &mu;m is defined as a number-of-atoms ratio of Ce/In (Comp<SP>S</SP>), and the average value of the cerium content in the whole of the sintered compact is defined as a number-of-atoms ratio of Ce/In (Comp<SP>A</SP>). Further, the vapor deposited thin film is deposited using an oxide tablet for vapor deposition, and, in the solar battery, the vapor deposition thin film is used as an electrode. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011149082(A) 申请公布日期 2011.08.04
申请号 JP20100013313 申请日期 2010.01.25
申请人 SUMITOMO METAL MINING CO LTD 发明人 ABE TAKAYUKI;WAKE RIICHIRO;KUWAHARA MASAKAZU;SOGABE KENTARO;OSHIRO AZUSA;YADA HISATAKA
分类号 C23C14/24;C04B35/00;C23C14/08;H01B5/14;H01L21/28;H01L21/285;H01L31/04 主分类号 C23C14/24
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