发明名称 Method of manufacturing a semiconductor device having an organic thin film transistor
摘要 An electrode substrate in which a lower electrode and an upper electrode are well positioned by way of an insulating film could not be formed by a printing method since positional displacement is caused. The cost was increased outstandingly when using photomasks for positioning. In the present invention, positional displacement does not occur even when using the printing method since the upper electrode and the lower electrode are positioned in self-alignment. Accordingly, a semiconductor device such as a flexible substrate using an organic semiconductor can be formed with low cost by using the printing method.
申请公布号 US7989143(B2) 申请公布日期 2011.08.02
申请号 US20070752340 申请日期 2007.05.23
申请人 HITACHI, LTD. 发明人 ARAI TADASHI;SHIBA TAKEO;ANDO MASAHIKO;TORII KAZUYOSHI
分类号 G03F7/26 主分类号 G03F7/26
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