发明名称 METHOD FOR PRODUCING GAS BARRIER FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a gas barrier film in which adhesion between a base material and a gas barrier layer is improved more remarkably than the conventional case at high productive efficiency. <P>SOLUTION: In the method for producing a gas barrier film, a gas barrier layer is formed on a continuously running base material 10. The production method includes: a step of forming an intermediate adhesive layer with a thickness of≥3 mm on the surface of a base material 10 by a plasma chemical vapor deposition method according to a means of, using an RIE (Reactive Ion Etching) treatment apparatus provided with a metal roll electrode 1 and a grounding electrode 2 as a circular counter electrode along the same, introducing one or more kinds of gases at least including a gas for oxidation and a vaporized organic silicon compound into a space between both the electrodes 1, 2 and a means of controlling the pressure in a treatment space to 3 to 35 Pa, controlling power supply frequency to the high frequency of 30 kHz to 4 MHz and generating plasma between both the electrodes 1, 2; and a step of forming a gas barrier layer on the surface of the intermediate adhesive layer by a vacuum deposition process. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011144438(A) 申请公布日期 2011.07.28
申请号 JP20100007827 申请日期 2010.01.18
申请人 TOPPAN PRINTING CO LTD 发明人 WATANABE YUKI;UEDA KYOSUKE
分类号 C23C16/509;B32B9/00;B32B37/00;B65D65/02;C08J7/04;C23C14/10 主分类号 C23C16/509
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