SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for avoiding a heading process to expose a dummy gate electrode by CMP and a forming process of a metal gate electrode by CMP. SOLUTION: The manufacturing method includes the processes of: selectively forming silicon films 25S and 25D on silicide films 24S and 24D; forming a recess 23V through which the top surface of a silicon substrate is exposed between side-wall insulating films 23WA and 23WB; forming a dielectric film so as to continuously cover top surfaces of the side-wall insulating films 23WA and 23WB and the exposed silicon substrate top surface; forming a conductive film containing metal or conductive metal nitride on the silicon substrate so as to fill the recess 23V via the dielectric film; and forming a gate electrode filling the recess 23V via the dielectric film between the side-wall insulating films 23WA and 23WB by etching back the conductive film. COPYRIGHT: (C)2011,JPO&INPIT