SPIN TORQUE AND MULTI-LEVEL DOMAIN WALL MEMORY

摘要

An MRAM device and a method of operating the MRAM device are provided. TheMRAM device includes a first magnetic hard layer, a tunnel barrier layer providedover the first magnetic hard layer, a magnetic memory layer provided over the tunnelbarrier layer, a second magnetic hard layer provided over the magnetic memorylayer, wherein the lateral size of the second magnetic hard layer is smaller than thelateral size of the magnetic memory layer.Figure 2