发明名称 POLISHING METHOD AND APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a polishing method and apparatus particularly suitable for performing surface-finish having desired flatness to the substrate of the compound semiconductor containing Ga element or the like, with which the surface of a substrate of the compound semiconductor containing, for example, the Ga element can be flattened with high surface precision within a practical machining time. SOLUTION: In electrolytic ion water 232 in which weakly acidic water or air is dissolved, the surface of the substrate 142 made of the compound semiconductor containing one of Ga, Al and In, and the surface of a polishing pad 242 having an electrically conductive member 264 in at least the portion of the surface contacting the substrate 142 are relatively moved in contact with each other to polish the surface of the substrate 142. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011146695(A) 申请公布日期 2011.07.28
申请号 JP20100277942 申请日期 2010.12.14
申请人 OSAKA UNIV;EBARA CORP 发明人 SANO YASUHISA;YAMAUCHI KAZUTO;MURATA JUNJI;SADAKUNI SHUN;YAGI KEITA
分类号 H01L21/304 主分类号 H01L21/304
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