发明名称 Method of manufacturing a liquid crystal display having top gate thin film transistors wherein each gate electrode contacts an auxiliary electrode
摘要 An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
申请公布号 US7986382(B2) 申请公布日期 2011.07.26
申请号 US20100958860 申请日期 2010.12.02
申请人 LG DISPLAY CO., LTD. 发明人 KIM MIN JOO;KANG HO CHEOL;CHOO KYO SEOP
分类号 G02F1/136;G02F1/13;H01L51/40 主分类号 G02F1/136
代理机构 代理人
主权项
地址