发明名称 |
Non-volatile memory device and method of operating the same |
摘要 |
A non-volatile memory device having a stack structure, and a method of operating the non-volatile memory device In which the non-volatile memory device includes a plurality of variable resistors arranged in at least one layer. At least one layer selection bit line and a plurality of bit lines coupled to the plurality of the variable resistors are provided. A plurality of selection transistors coupled between the plurality of the bit lines and the plurality of the variable resistors are provided.
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申请公布号 |
US7986545(B2) |
申请公布日期 |
2011.07.26 |
申请号 |
US20090465125 |
申请日期 |
2009.05.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON TAE-EUNG;KIM WON-JOO;KOO JUNE-MO;KIM SUK-PIL;LEE TAE-HEE |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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