发明名称 |
DEVICE STRUCTURE, LAYOUT AND FABRICATION METHOD FOR UNIAXIALLY STRAINED TRANSISTORS |
摘要 |
A semiconductor device and method for fabricating a semiconductor device include providing a strained semiconductor layer having a first strained axis, forming an active region within a surface of the strained semiconductor layer where the active region has a longitudinal axis along the strained axis and forming gate structures over the active region. Raised source/drain regions are formed on the active regions above and over the surface of the strained semiconductor layer and adjacent to the gate structures to form transistor devices.
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申请公布号 |
US2011175164(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US20100689346 |
申请日期 |
2010.01.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;BU HUIMING;CHENG KANGGUO;DORIS BRUCE B.;FALTERMEIER JOHNATHAN E.;KHAKIFIROOZ ALI;SADANA DEVENDRA K.;YEH CHUN-CHEN |
分类号 |
H01L27/12;H01L21/86 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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