发明名称 |
Semiconductor Device and Method of Fabricating the Same |
摘要 |
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. |
申请公布号 |
US2011175149(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US201113079635 |
申请日期 |
2011.04.04 |
申请人 |
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发明人 |
KIM JUNG-HWAN;LEAM HUN-HYEOUNG;KIM TAE-HYUN;NAM SEOK-WOO;NAMKOONG HYUN;KIM YONG-SEOK;YU TEA-KWANG |
分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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