POLYSILICON FILM, THE METHOD FOR FABRICATION THEREOF, THIN FILM TRANSISTOR WITH THE POLYSILICON FILM AND ORGANIC LIGHT EMITTING DISPLAY DEVICE WITH THE THIN FILM TRANSISTOR

摘要

PURPOSE: A polysilicon layer, a manufacturing method thereof, a thin film transistor using the same, and an organic light emitting display device are provided to increase the amount of on-current and to reduce leakage current by using a polysilicon layer as an active layer. CONSTITUTION: An amorphous silicon layer is formed on a buffer layer above a substrate. A catalyst metal layer is formed on the amorphous silicon layer so as to obtain the density of 1011-1015 atom/cm2. The catalytic metal of the catalyst metal layer is diffused into the amorphous silicon layer and a crystallization seed having a shape of a pyramid is formed on an interface between the amorphous silicon layer and the buffer layer. A silicon crystal is grown by the crystallization seed so as to form the polysilicon layer.