发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
An array configuration capable of supplying a necessary and sufficient current in a small area is achieved and a reference cell configuration suitable to temperature characteristics of a TMR element is achieved. In a memory using inversion of spin transfer switching, a plurality of program drivers are arranged separately along one global bit line, and one sense amplifier is provided to one global bit line. A reference cell to which "1" and "0" are programmed is shared by two arrays and a sense amplifier. |
申请公布号 |
EP2346047(A1) |
申请公布日期 |
2011.07.20 |
申请号 |
EP20090819166 |
申请日期 |
2009.10.05 |
申请人 |
HITACHI, LTD. |
发明人 |
KAWAHARA, TAKAYUKI;TAKEMURA, RIICHIRO;ONO, KAZUO |
分类号 |
G11C11/15;H01L21/8246;H01L27/105;H01L43/08 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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