METHOD FOR FABRICATING PERPENDICULAR MAGNETIC ANISOTROPY COFEB FILMS AND MAGNETIC RANDOM ACCESS MEMORY FABRICATED USING THE SAME

摘要

PURPOSE: A method for fabricating perpendicular magnetic anisotropy CoFeB films and magnetic random access memory fabricated using the same are provided to maintain improved vertical magnetic anisotropy by controlling the thickness of CoFeB magnetic layer to be 1.5~2nm. CONSTITUTION: In a method for fabricating perpendicular magnetic anisotropy CoFeB films and magnetic random access memory fabricated using the same, an CoFeB thin film is formed on a substrate and has thickness of 1.5~2nm. A Pd layer is formed on the top and the bottom of the CoFeB thin film. A substrate is selected among a silicon substrate, a glass substrates, a sapphire substrate, and a magnesium oxide substrate. Increasing Co proportion of Fe lowers saturation magnetization and to implement high vertical magnetic anisotropy.