| 摘要 |
<p>PURPOSE: A negative type resist composition and a method for forming patterns are provided to reduce the line-edge roughness of the patterns when 45 nm line-end-space patterns are formed. CONSTITUTION: A negative type resist composition and a method for forming patterns are composed of the combination of a base polymer and a cross-linking agent, an acid generator, and a nitrogen-containing compound. A part of the base polymer includes alkylthio group represented by chemical formula 3. In the chemical formula 3, the R3 is C1 to C20 linear, branched, or cyclic alkyl group, C2 to C20 hydroxyalkyl group, C2 to C20 alkoxyalkyl group, C1 to C20 mercaptoalkyl group, or C2 to C20 alkylthio alkyl group.</p> |
