| 摘要 |
PURPOSE: A nitride semiconductor light emitting device is provided to place a current spreading layer in a light emitting device to increase electron mobility on a hetero-junction interface, thereby enhancing a current dispersing feature. CONSTITUTION: A light emitting structure is formed on a substrate(101). An n type nitride semiconductor layer(102), an active layer(104), and a p type nitride semiconductor layer(105) are formed in the light emitting structure. A current spreading layer(103) is formed between the n type nitride semiconductor layer and the active layer. The current spreading layer forms a uniform current flow. A p type electrode(106b) is formed on the p type nitride semiconductor layer.
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