| 摘要 |
A photolithography method is provided which includes: arranging a layout topography in a first mask and a second mask in such a way that at least a layout pattern of the layout topography is defined by an overlap area. The overlap area is formed when at least a first pattern of the first mask and at least a second pattern of the second mask are projected on a common surface and are overlapped to each other. Critical dimensions of the first mask and the second mask are larger than a resolution of a photolithography machine for preventing from bridging.
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