| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of forming a thin-film resistor having a small TCR (temperature coefficient of resistance) value and formed of a TaN film ensuring a practically necessary film thickness while preventing TaN film damage in forming a wiring of the resistor. SOLUTION: A first interlayer dielectric is formed on a semiconductor substrate having a semiconductor element formed thereon, and a tantalum nitride film is formed on the first interlayer dielectric by first sputtering at a substrate temperature from a normal temperature to 400°C with a nitride gas partial pressure ratio of 3-10% in a reaction gas. After that, a via hole reaching the tantalum nitride film is formed by wet etching on the second interlayer dielectric formed on the first interlayer dielectric, a metal film is deposited by second sputtering to form the metal film in the via hole, and a via connected to the tantalum nitride film is formed. COPYRIGHT: (C)2011,JPO&INPIT
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