发明名称 SEMICONDUCTOR DEVICE, AND METHOD FOR ANALYSIS OF DEFECTIVE OF THE SAME
摘要 PROBLEM TO BE SOLVED: To facilitate finding a specific point furthermore, by more easily specifying an inside specific region corresponding to a region of a surface of a semiconductor device. SOLUTION: A method includes a step of specifying a relative position 7 corresponding to a surface marker 2-i of a specific surface region 6 out of the surface 4, a step of exposing a cross sectional surface 3-j by polishing the semiconductor device 1, a step of specifying a specific cross sectional surface region 10 out of the cross sectional surface 3-j based on a cross sectional surface marker 5-i corresponding to the surface marker 2-i and the relative position 7, and a step of observing the specific cross sectional surface region 10. In such an analyzing method for defective of the semiconductor device, a user can easily specify the specific cross sectional surface region 10 inside the semiconductor device 1, and can easily inspect the specific cross sectional surface region 10 as well. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011139007(A) 申请公布日期 2011.07.14
申请号 JP20100000266 申请日期 2010.01.04
申请人 RENESAS ELECTRONICS CORP 发明人 HASEGAWA TOMOKAZU
分类号 H01L21/66 主分类号 H01L21/66
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