| 摘要 |
A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.
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