| 发明名称 |
METHODS OF FORMING NICKEL SULPHIDE FILM ON A SEMICONDUCTOR DEVICE |
| 摘要 |
Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor.
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| 申请公布号 |
US2011169059(A1) |
申请公布日期 |
2011.07.14 |
| 申请号 |
US201113051745 |
申请日期 |
2011.03.18 |
| 申请人 |
CLENDENNING SCOTT BRUCE;MUKHERJEE NILOY;PILLARISETTY RAVI |
发明人 |
CLENDENNING SCOTT BRUCE;MUKHERJEE NILOY;PILLARISETTY RAVI |
| 分类号 |
H01L29/78;H01L21/285 |
主分类号 |
H01L29/78 |
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