NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF

摘要

A nitride semiconductor light-emitting element (31) comprising an n-type GaN substrate (1) having an m-face as the main surface, a current diffusion layer (7) formed on the n-type GaN substrate (1), an n-type nitride semiconductor layer (2) formed on the current diffusion layer (7), an active layer (3) formed on the n-type nitride semiconductor layer (2), a p-type nitride semiconductor layer (4) formed on the active layer (3), a p-side electrode (5) so formed as to contact with the p-type nitride semiconductor layer (4), and an n-side electrode (6) so formed as to contact with the n-type GaN substrate (1) or the n-type nitride semiconductor layer (2), wherein the donor impurity concentration in the n-type nitride semiconductor layer (2) is 5×1018 cm-3 or less and the donor impurity concentration in the current diffusion layer (7) is 10-fold or more higher than that in the n-type nitride semiconductor layer (2).