| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device, along with a method of manufacturing the same, for reducing a leakage current of a three dimensionally formed transistor or thyristor for DRAM. <P>SOLUTION: The device includes a silicon pillar 12 that is formed almost perpendicularly to a main surface of a substrate 10, first and second impurity diffused layers 14, 16 that are arranged in a lower part and an upper part of the silicon pillar 12, respectively, a gate electrode 18 that is arranged penetrating the silicon pillar 12 horizontally, and a gate insulating film 20 that is arranged between the gate electrode 18 and the silicon pillar 12. Thereby, the silicon pillar 12 consequently has a small volume, which makes it possible to reduce the leakage current of the transistor or thyristor formed in the silicon pillar 12. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
