| 摘要 |
<p>The present invention has an object of providing a thyristor-type semiconductor device and a manufacturing method for the same which can prevent, even when conventional manufacturing equipment is used, the electrode terminals 13, 14 from being provided in a significantly tilted state where the electrode terminals 13, 14 are in contact with the silicon substrate 20, and can also prevent the electrode terminals 13, 14 from being provided in a state where the electrode terminals 13, 14 come into contact with the silicon substrate 20, even when there are warping and undulations in the silicon substrate 20. In a semiconductor device of the present invention, the supports 11a, 11b are provided on both surfaces of the silicon substrate 20 using a glass material. When doing so, the support 11b is disposed in a part of the boundary between the second N-type layer 18 and the second P-type layer 19 that is opposite the side surface 22. With this structure, even if the electrode terminals 13, 14 are tilted when the electrode terminals 13, 14 are provided, the supports 11a, 11b support the electrode terminals 13, 14 from below, so that the electrode terminals 13, 14 can be prevented from being provided in contact with the silicon substrate 20. Also, even when there are warping and undulations in the silicon substrate 20, the electrode terminals 13, 14 can be prevented from being provided in contact with the silicon substrate 20. <IMAGE></p> |
