| 摘要 |
A semiconductor device and system for a hybrid metal fully silicided (FUSI) gate structure is disclosed. The semiconductor system comprises a PMOS gate structure, the PMOS gate structure including a first high-&kgr; dielectric layer, a P-metal layer, a mid-gap metal layer, wherein the mid-gap metal layer is formed between the high-&kgr; dielectric layer, the P-metal layer and a fully silicided layer formed on the P-metal layer. The semiconductor system further comprises an NMOS gate structure, the NMOS gate structure includes a second high-&kgr; dielectric layer, the fully silicided layer, and the mid-gap metal layer, wherein the mid-gap metal layer is formed between the high-&kgr; dielectric and the fully silicided layer.
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