COMPOSITION FOR THE BOTTOM LAYER OF A RESIST, AND METHOD USING SAME TO MANUFACTURE A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

Provided is a composition for the bottom layer of a resist, including an organic-silane-based polycondensation compound and a solvent. The organic-silane-based polycondensation compound is provided at a structural unit of 10 mol % to 40 mol % as expressed in chemical formula 1 in the specification. Therefore, the present invention relates to a composition for a bottom layer of a resist enabling excellent pattern transferability, using a bottom layer of a resist that has excellent storage stability and etch resistance, and to a method using same to manufacture a semiconductor integrated circuit device.