| 摘要 |
PURPOSE: A semiconductor device and a fabricating method thereof are provided to implement complete isolation from the semiconductor device around a grown epi layer by forming a guided ring with a buried layer which is formed on an oxide of a vertical structure of the sidewall of a trench. CONSTITUTION: In a semiconductor device and a fabricating method thereof, an insulating layer pattern consisting of a first oxide film(110) and a nitride film(120) which are formed on a substrate(100). A trench is formed on the substrate by using the insulating pattern as a mask. An impurity ion is inputted into the trench to form a buried layer in the side wall and the bottom of the trench. A second oxide film is formed on the sidewall and bottom in the trench. An epi layer is formed in the trench by growing the bottom of the trench.
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