| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photodetector that allows two-dimensional detection using an arrangement of a single plasmon structure and a semiconductor absorption layer. <P>SOLUTION: The photodetector includes a doped semiconductor layer (12), a reflection layer (22) located under the semiconductor layer (12), a metal structure (16) arranged on the semiconductor layer (12) to form a surface plasmon resonator along with the semiconductor layer (12), and a plurality of semiconductor regions (24) formed within the semiconductor layer (12) to be doped in the opposite direction of doping of the semiconductor layer (12). For each of the semiconductor regions (24), a conductor (26) penetrates from the semiconductor layer (12) to the semiconductor regions (24) at least, and is electrically isolated from the metal structure (16) along with the semiconductor regions (24) related to the corresponding conductor (26), thereby partitioning a basic detection surface of the photodetector. <P>COPYRIGHT: (C)2011,JPO&INPIT |
