| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate semiconductor device, along with an insulated gate semiconductor integrated circuit, having radiation resistance. SOLUTION: The insulated gate semiconductor device includes a p-type semiconductor layer 11 that partially forms a channel region; an element isolation insulating film 21 where an active region 21B is defined on an upper part of the semiconductor layer 11; an n-type first main electrode region 12 injecting a carrier to the channel region via a carrier injection opening; an n-type second main electrode region 13 having a carrier discharge opening discharging the carrier from the channel region; a gate insulating film 22 formed on the active region 21B, a gate electrode 24 which is disposed on the gate insulating film 22, has a main control unit orthogonal to a channel of the carrier flowing between the first main electrode region 12 and the second main electrode region 13, and two guard parts 241 and 242 crossing the main control unit and is made into aπshape; and p-type leak inhibition regions 61 and 62 arranged on both end sides of a gate width direction of the second main electrode region 13. COPYRIGHT: (C)2011,JPO&INPIT |
