| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a nonvolatile memory which restrains generation of memory malfunction caused by an increase of a storage capacity. SOLUTION: The device has a semiconductor substrate, an element isolated insulating film buried in its surface, and a plurality of nonvolatile memory cells on the substrate. The memory cell has a first insulating film on the substrate, a charge storage layer on the first insulating film, a control gate electrode above the charge storage layer, and a second insulating film between the control gate electrode and the charge storage layer. In a cross-sectional plane in a channel width direction of the memory cell, the upper surface of the element isolating insulating film is higher than the substrate surface and lower than the upper surface of the charge storage layer. The second insulating film is provided on the upper surface of the element isolating insulating film and on the upper surface of the charge storage layer. Dielectric constant of the second insulating film on the upper surface of the element isolation insulating film is lower than that of the second insulating film on the upper surface of the charge storage layer, and includes a region where composition is different from that of the second insulating film on an upper surface of the charge storage layer. A control gate electrode on the upper surface of the element isolation insulating film between adjacent memory cells of a plurality of memory cells is protruded downward. COPYRIGHT: (C)2011,JPO&INPIT |
