发明名称 METHOD FOR FABRICATING CMOS IMAGE SENSOR
摘要 PURPOSE: A method for manufacturing an image sensor is provided to reduce heat applied to a wiring layer by thermally processing a photo diode through the lower side of a substrate. CONSTITUTION: A photo diode(110) is formed on the upper side(101) of a substrate(100). A wiring layer is formed on the substrate. Heat is applied to the photo diode through the lower side of the substrate. A heat source of 800 to 1500 degrees centigrade is arranged on the lower side of the substrate.
申请公布号 KR20110078165(A) 申请公布日期 2011.07.07
申请号 KR20090134903 申请日期 2009.12.30
申请人 DONGBU HITEK CO., LTD. 发明人 SHIN, DONG WON
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项
地址