| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent roughness of a surface of a semiconductor layer (for instance, a single-crystal silicon layer) when manufacturing an SOI substrate by bonding a base substrate (for instance, a glass substrate) to a semiconductor substrate (for instance a single-crystal silicon substrate). <P>SOLUTION: The semiconductor substrate provided with a groove portion is irradiated with ions so that an embrittled region is formed in the semiconductor substrate, the semiconductor substrate and a base substrate are bonded to each other through an insulating layer, and a space which is surrounded by the groove portion of the semiconductor substrate and the base substrate is formed, and heat treatment is performed to separate the semiconductor substrate in the embrittled region, so that the semiconductor layer is formed on the base substrate through the insulating layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
