| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching method that controls the tapered shape of projections regardless of the shape of a resist film, and also to provide a plasma processing apparatus. <P>SOLUTION: The etching method is used to form projections 21a by etching on a sapphire substrate used in a semiconductor light-emitting element formed by providing semiconductor layers 22, 23, and 24 on the sapphire substrate 21 having the projections 21a. The sapphire substrate 21 having a resist film formed on the surface is etched by exciting a mixed gas, formed by adding a carbon-based gas to etching gas, into a plasma state while adjusting the flow rate of the carbon-based gas, thereby adjusting the tapered shape of the projections 21a. <P>COPYRIGHT: (C)2011,JPO&INPIT |
