| 摘要 |
PURPOSE: A method for manufacturing CMOS image sensor device is provided to prevent a bridge between adjacent pins due to misalignment in bonding by removing the upper part of a boned copper pin to prevent a bridge between the adjacent pins from being bridged. CONSTITUTION: A photo diode(204) is formed in a first substrate. A transistor(104) for controlling the photo diode is formed in the second substrate. A trench(122) is penetrated through a first interlayer insulating film(106), a first protective film(108), and the substrate. A plurality of contacts(105) are penetrated through the first interlayer insulating film and the first protective film.
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