发明名称 PLASMA PROCESSING APPARATUS AND ELECTRODE USED THEREIN
摘要 PURPOSE: An apparatus for processing plasma with a high radio frequency power and an electrode used therefore are provided to control high frequency field strength by forming the conductive adhesive layer formed in a junction part between a dielectric substance and a base material. CONSTITUTION: A processing container is decompressed. A dielectric substance(205) is made of the same material as the base material(105a) and is laid under the material. An electrode is formed within the processing container. A high radio frequency power is supplied into the processing container. A conductive adhesive layer(210a) is formed in the junction part between a dielectric substance and a base material.
申请公布号 KR20110076810(A) 申请公布日期 2011.07.06
申请号 KR20100135879 申请日期 2010.12.27
申请人 TOKYO ELECTRON LIMITED 发明人 HAYASHI DAISUKE
分类号 H05H1/46;H01L21/3065;H05H1/34 主分类号 H05H1/46
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