发明名称 Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
摘要 The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.
申请公布号 US7973313(B2) 申请公布日期 2011.07.05
申请号 US20040781795 申请日期 2004.02.20
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ARAI YASUYUKI;ISHIKAWA AKIRA;TAKAYAMA TORU;MARUYAMA JUNYA;GOTO YUUGO;OHNO YUMIKO;TACHIMURA YUKO
分类号 H01L27/12;G06K19/077;H01L21/77;H01L21/84;H01L29/66;H01L29/786 主分类号 H01L27/12
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