| 摘要 |
PURPOSE: A nonvolatile memory device, a reading method thereof, and a memory system including the same are provided to suppress current consumption in a memory cell which is not a target in reading by including a word line drive unit and a bit line bias unit. CONSTITUTION: In a nonvolatile memory device, a reading method thereof, and a memory system including the same, a non-volatile memory device comprises a memory array which is comprised of a plurality of memory layers. A rectifier element(D) selects the memory cell(MC) of each memory layer. The nonvolatile memory comprises the word line drive unit and the bit line bias unit. The word line drive unit drives a first word line by a first voltage level. The word line drive unit drives a second word line by a second voltage level. The bit line bias unit biases the first bit line by the second voltage level. The bit line bias unit biases the second bit line by the first voltage level.
|
