| 摘要 |
There is provided a low-dropout regulator capable of preventing transistors from operating in a triode or deep triode region. A low-dropout regulator according to an aspect of the invention may include: a first operational amplifier having a first input receiving an input voltage; a first P-channel MOSFET having a gate connected to an output of the first operational amplifier, a source connected to a power source terminal, and a drain connected to an output terminal; a feedback circuit providing at least portion of a voltage of the output terminal as a feedback to a second input of the first operational amplifier; and a triode limiter circuit receiving voltages at the source and the gate of the first P-channel MOSFET comparing a voltage difference therebetween with a predetermined reference voltage, and increasing a voltage of the second input of the first operational amplifier when the voltage difference is substantially the same as the reference voltage to thereby prevent the first P-channel MOSFET from entering a triode mode or a deep triode mode.
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