| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device for high power application using a new semiconductor material having high productivity, or to provide a semiconductor device of a new structure using a new semiconductor material. <P>SOLUTION: Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor having a band gap wider than that of a silicon semiconductor, or an intrinsic or substantially intrinsic semiconductor by removing impurities serving as electron donors (donors) in the oxide semiconductor. The thickness of the oxide semiconductor is not less than 1μm, preferably greater than 3μm, more preferably not less than 10μm. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
