METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING FLASH MEMORY, METHOD OF MANUFACTURING STATIC RANDOM ACCESS MEMORY, AND FLASH MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that is improved to prevent a modified resist surface layer from peeling when continuously performing dry etching and wet etching by the same resist pattern. SOLUTION: An insulation film 2 and a conductive layer 3 are sequentially formed on a semiconductor substrate 1. A resist pattern 4 is formed on the conductive layer 3. By using the resist pattern 4 for a mask, the conductive layer 3 is subjected to dry etching. A surface layer part of the resist pattern 4 is partially shaved. By using the resist pattern 4 for a mask, the insulation film 2 is subjected to wet etching. COPYRIGHT: (C)2011,JPO&INPIT