| 摘要 |
A silicon carbide single crystal manufacturing apparatus includes a pedestal on which a seed crystal is disposed and a heating crucible disposed on an upstream side of a flow channel of source gas with respect to the pedestal. The heating crucible supplies the source gas to the seed crystal by introducing the source gas from an upstream end of a hollow cylindrical member and discharging the source gas from a downstream end of the hollow cylindrical member. A diameter narrowing part is disposed on the downstream end and has an opening portion that is smaller than an opening size of the hollow cylindrical member. The whole opening portion of the diameter narrowing part is included in a region that is defined by projecting an outer edge of the pedestal in a center axis direction of the heating crucible.
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