| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of facilitating obtaining the semiconductor device with a smaller number of processes, wherein a plurality of bipolar transistors having different DC current amplification factors (hfe) is mixedly mounted. SOLUTION: A dummy layer 52 is formed on the periphery of a contact region 25A in an emitter region 25, i.e., on an emitter region 25 of a second bipolar transistor 20 or on the circumference thereof. After that, since the thickness of an interlayer dielectric 53 can be made thick, a contact hole 54 is formed with the contact depth made shallow as compared with an emitter region 15 of a first bipolar transistor 10 in the emitter region 25 of the second bipolar transistor 20. Thereby, the DC current amplification factor (hfe) of the first bipolar transistor 10 and the second bipolar transistor 20 can be changed. The forming of the dummy layer 52 may be in a base region 26 or a collector region 27 of the second bipolar transistor 20. COPYRIGHT: (C)2011,JPO&INPIT |
