SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A semiconductor device and a method for forming the same are provided to improve the reliability and the yield of the semiconductor device by preventing the capacitor deterioration of a ferroelectric memory contained in the memory part of a radio frequency identification chip. CONSTITUTION: A ferroelectric capacitor is formed at the upper side of a metal line. A hydrogen barrier film(102) is formed at the lateral side and a part of the upper side of the ferroelectric capacitor. A metal insulating film(103) is formed at the upper side and the lateral side of the hydrogen barrier film. A plate line(PL) is formed at the upper side and the lateral side of the metal insulating film and is in connection with the upper electrode of the ferroelectric capacitor. The plate line includes a plate line contact in connection with the metal line. The plate line includes an upper electrode contact in connection with the upper electrode of the ferroelectric capacitor.