发明名称 WAFER PLATING APPARATUS
摘要 PURPOSE: A substrate plating apparatus is provided to make electrolyte between a target and a substrate into a turbulent flow to thereby improve metal ion transfer effect through the electrolyte. CONSTITUTION: A substrate plating apparatus comprises a chamber(10), a target(20), an electrolyte supply source(30), and a turbulent flow induction part(40). The chamber accepts electrolyte. The chamber selectively dips a substrate connected to a cathode. The target is dipped in the electrolyte. The target generates metallic ions when a positive voltage applied thereto. The electrolyte supply source supplies the electrolyte to the chamber. The turbulent flow induction part makes the electrolyte into a turbulent flow in the chamber.
申请公布号 KR20110071285(A) 申请公布日期 2011.06.29
申请号 KR20090127805 申请日期 2009.12.21
申请人 K.C.TECH CO., LTD. 发明人 CHO, HYUN WOO
分类号 C25D17/02 主分类号 C25D17/02
代理机构 代理人
主权项
地址