| 摘要 |
<p>A method for treating the surface of a wafer (11) for producing a solar cell, to which wafer an anti-reflection and passivation layer (16) has been applied, in a step preceding the method, to a p-doped layer (14), involves the surface being treated in a machining step before subsequent metallization on the surface of the wafer in order to produce contacts for the solar cell. This serves for passivation and for removal of the p-doped layer (14) in the region of disturbances (18) such as scratches, defect points, pinholes and inhomogeneous regions in the antireflection and passivation layer (16). It is thus possible to avoid metal depositions on these disturbances.</p> |
