POWER AMPLIFIER OF CASCODE STRUCTURE USING GALLIUM-NITRIDE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A cascode power amplifier using a gallium nitride device and a fabrication method thereof are provided to improve system efficiency and to reduce cost of a system, by obtaining wideband characteristics. CONSTITUTION: A cascade amplifier circuit part(20) amplifies an input signal through more than two GaN transistors(FET1,FET2). An input matching unit(10) performs impedance matching between a wireless signal input line and an input port of the cascode amplifier circuit part. The input matching circuit comprises microstrip lines, a resistor, an inductor and a capacitor. An output matching circuit part(30) performs impedance matching between an output port of the cascode amplifier circuit part and the wireless signal output line.