发明名称 COMPOSITION FOR FORMING PHOTOSENSITIVE RESIST UNDERLAYER FILM
摘要 Disclosed is a composition for forming a resist underlayer film that is free from dissolution of a photoacid generator contained therein into the solvent of a coating photoresist and can be alkali developed at the same time when the photoresist film is alkali developed. Specifically disclosed is a composition for forming a resist underlayer film used in a lithography process, which contains a polymer (A), a crosslinkable compound (D), a photoacid generator (E) and a solvent (F). The polymer (A) contains unit structures represented by formula (1), formula (2) and formula (3), and when the total mole number of all the unit structures constituting the polymer is taken as 1.0, the ratio of the mole number (a) of the unit structures represented by formula (1), the ratio of the mole number (b) of the unit structures represented by formula (2) and the ratio of the mole number (c) of the unit structures represented by formula (3) are within the following ranges: 0.20 = a = 0.90, 0.05 = b = 0.60 and 0.001 = c = 0.40. The polymer (A) has a weight average molecular weight of 3,000-100,000.
申请公布号 WO2011074433(A1) 申请公布日期 2011.06.23
申请号 WO2010JP71816 申请日期 2010.12.06
申请人 NISSAN CHEMICAL INDUSTRIES, LTD.;HORIGUCHI, YUSUKE;UMEZAKI, MAKIKO;FUJITANI, NORIAKI;NISHIMAKI, HIROKAZU;KISHIOKA, TAKAHIRO;HAMADA, TAKAHIRO 发明人 HORIGUCHI, YUSUKE;UMEZAKI, MAKIKO;FUJITANI, NORIAKI;NISHIMAKI, HIROKAZU;KISHIOKA, TAKAHIRO;HAMADA, TAKAHIRO
分类号 G03F7/095;C08F212/14;C08F220/56;G03F7/004;G03F7/039;G03F7/11;H01L21/027 主分类号 G03F7/095
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