FLASH SEMICONDUCTOR DEVICE HAVING TRIPPLE WELL STRUCTURE

摘要

PURPOSE: A flash semiconductor device having a triple well structure is provided to minimize voltage and signal loss over a bulk region by electrically separating switches around a flash memory device. CONSTITUTION: In a flash semiconductor device having a triple well structure, a cell region(160) comprises a plurality of memory cells(MC0~MC31). A plurality of memory cells are serially connected to one cell string. The first peripheral area(100) comprises a low voltage switch and a high voltage switch The low voltage and high voltage switch are connected to the memory cells. A second peripheral area(140) comprises a bulk voltage switch connected to the bulk regions of a high voltage and low voltage.