Method of producing high quality silicon carbide single crystal in a seeded growth system.
摘要
<p>A method of producing high quality bulk silicon carbide single crystal in a seeded growth system is disclosed. Undesired curvature of the growth surface within the first 10 mm of growth is avoided according to this method.</p>
申请公布号
EP2336399(A2)
申请公布日期
2011.06.22
申请号
EP20100185748
申请日期
2005.06.14
申请人
CREE, INC.
发明人
JENNY, JASON RONALD;MALTA, DAVID PHILLIP;HOBGOOD, HUDSON MCDONALD;MUELLER, STEPHAN G.;BRADY, MARK;LEONARD, ROBERT T.;POWELL, ADRIAN;TSVETKOV, VALERI F.
