发明名称 |
Memory device, data recording method and IC tag |
摘要 |
A memory device of the present invention is characterized by a memory device for storing information by making use of molecular alignment of a liquid crystal compound in a liquid crystalline state formed by spot irradiation with a laser beam to carry out a selective heat treatment on an electroconductive liquid crystal semiconductor material layer containing a liquid crystal compound, comprising: a first electrode group including a plurality of linear electrodes which are parallel to each other; an electroconductive liquid crystal semiconductor material layer formed in such a manner that the layer covers the first electrode group, the layer containing a liquid crystal compound having a long linear conjugate structural moiety and exhibiting a smectic phase as a liquid crystal phase; and a second electrode group formed on the electroconductive liquid crystal semiconductor material layer and including a plurality of linear transparent electrodes being parallel to each other and extend in a direction intersecting with the first electrode group.
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申请公布号 |
US7965534(B2) |
申请公布日期 |
2011.06.21 |
申请号 |
US20070301699 |
申请日期 |
2007.05.18 |
申请人 |
YAMANASHI UNIVERSITY;NIPPON CHEMICAL INDUSTRIAL CO., LTD. |
发明人 |
HARAMOTO YUICHIRO;KATO TAKAMASA;HIROSHIMA KOHKI |
分类号 |
G11C13/04 |
主分类号 |
G11C13/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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