发明名称 Memory device, data recording method and IC tag
摘要 A memory device of the present invention is characterized by a memory device for storing information by making use of molecular alignment of a liquid crystal compound in a liquid crystalline state formed by spot irradiation with a laser beam to carry out a selective heat treatment on an electroconductive liquid crystal semiconductor material layer containing a liquid crystal compound, comprising: a first electrode group including a plurality of linear electrodes which are parallel to each other; an electroconductive liquid crystal semiconductor material layer formed in such a manner that the layer covers the first electrode group, the layer containing a liquid crystal compound having a long linear conjugate structural moiety and exhibiting a smectic phase as a liquid crystal phase; and a second electrode group formed on the electroconductive liquid crystal semiconductor material layer and including a plurality of linear transparent electrodes being parallel to each other and extend in a direction intersecting with the first electrode group.
申请公布号 US7965534(B2) 申请公布日期 2011.06.21
申请号 US20070301699 申请日期 2007.05.18
申请人 YAMANASHI UNIVERSITY;NIPPON CHEMICAL INDUSTRIAL CO., LTD. 发明人 HARAMOTO YUICHIRO;KATO TAKAMASA;HIROSHIMA KOHKI
分类号 G11C13/04 主分类号 G11C13/04
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